Strategic Objectives
• Deconstruct the physical chemistry of the SiC-SiO2 interface and its inherent defects.
• Analyze the microscopic mechanisms of Time-Dependent Dielectric Breakdown (TDDB).
• Master the kinetics of Bias Temperature Instability (BTI) in wide-bandgap materials.
• Predict reliability bottlenecks using advanced physics-of-failure modeling.
The Core Challenge
As Silicon Carbide (SiC) pushes the limits of power density, the SiC-SiO2 interface remains the most vulnerable point of failure in modern Trench MOSFETs.
01
The Evolution of Power MOSFETs
02
Silicon Carbide Fundamentals
03
The Thermal Oxidation Process
04
Atomic Structure of the Interface
05
Physics of the Gate Dielectric
06
Band Alignment and Offsets
07
Point Defects in the Lattice
08
Carrier Transport Mechanisms
09
Interface States and Traps
10
Hot Carrier Injection
11
Bias Temperature Instability
12
Time-Dependent Dielectric Breakdown
13
Percolation Theory of Breakdown
14
Trench Corner Stress Concentration
15
Impact Ionization and Avalanche
16
Nitridation and Passivation
17
Alternative High-k Dielectrics
18
Microscopic Analysis Techniques
19
Statistical Reliability Models
20
The Arrhenius Equation in Aging
21