Strategic Objectives
• Master the physics of deep-level traps and their impact on carrier dynamics.
• Implement Deep-Level Transient Spectroscopy (DLTS) for precise defect identification.
• Quantify the relationship between crystalline lattice strain and electrical performance.
• Navigate the complex landscape of non-radiative recombination and leakage currents.
The Core Challenge
In the race for semiconductor efficiency, crystalline defects act as silent traps, killing carrier lifetimes and sabotaging yield long before traditional metrology can detect them.
01
The Anatomy of a Crystal
02
The Nature of Imperfection
03
Electronic States in the Gap
04
The Physics of Deep Levels
05
Carrier Dynamics and Life
06
The Shockley-Read-Hall Model
07
Fundamentals of DLTS
08
Capacitance and Depletion
09
Thermal Emission Processes
10
Optical Defect Probing
11
Metals in the Lattice
12
Point Defects in Silicon
13
Dislocation and Strain
14
Characterizing Compound Semiconductors
15
Surface and Interface States
16
Irradiation and Displacement
17
Measurement Instrumentation
18
Carrier Lifetime Metrology
19
Defect Passivation
20
Predictive Modeling
21