Strategic Objectives
• Master the fundamental chemistry of self-limiting surface reactions.
• Engineer pinhole-free dielectric layers with absolute thickness control.
• Optimize the critical interface between high-k materials and silicon.
• Navigate the physics of tunneling and equivalent oxide thickness (EOT).
The Core Challenge
As transistors shrink, traditional oxides leak and fail, threatening the future of Moore's Law and high-performance computing.
01
The Evolution of the Gate Stack
02
Foundations of ALD
03
Surface Science and Adsorption
04
Organometallic Precursors
05
The ALD Window
06
Hafnium Oxide and Beyond
07
Interface Physics
08
Nucleation and Initial Growth
09
Plasma-Enhanced ALD
10
Equivalent Oxide Thickness (EOT)
11
Tunneling and Leakage Mechanisms
12
Metal Gate Integration
13
Stoichiometry and Defects
14
Characterization: Ellipsometry
15
Characterization: Electron Microscopy
16
Thermal Stability and Annealing
17
Surface Functionalization
18
ALD Reactor Design
19
Reliability and Dielectric Breakdown
20
Doping and Multicomponent Oxides
21
Future Frontiers in ALD
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