Strategic Objectives
• Navigate the complex chemistry of GaN, AlN, and InN etching.
• Optimize plasma-surface interactions for maximum selectivity and minimal damage.
• Master high-density plasma sources like ICP and ECR for precise patterning.
• Implement advanced endpoint detection and surface passivation techniques.
The Core Challenge
The extreme chemical stability of Group-III nitrides makes conventional etching impossible, demanding complex high-density plasma solutions.
01
The Rise of Group-III Nitrides
02
Physics of Wide Bandgap Materials
03
Fundamentals of Plasma Physics
04
Principles of Dry Etching
05
High-Density Plasma Sources
06
Reactive Ion Etching (RIE) Mechanics
07
Chlorine-Based Etch Chemistry
08
Fluorine Chemistry and Selectivity
09
Plasma-Surface Interactions
10
The Role of Ion Bombardment
11
Masking Materials and Strategy
12
Etch Selectivity and Uniformity
13
Gallium Nitride (GaN) Specifics
14
Aluminum Nitride (AlN) Challenges
15
Indium Nitride (InN) and Ternary Alloys
16
Plasma Induced Damage (PID)
17
Endpoint Detection Systems
18
Advanced Pulsed Plasma Techniques
19
Atomic Layer Etching (ALE)
20
Vacuum Systems and Hardware
21
Future Trends in Nitride Etching
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