Strategic Objectives
• Master the physics of bulk Gallium Nitride growth and substrate drift layers.
• Identify the critical design shifts required to move from lateral to vertical geometries.
• Explore advanced fabrication techniques for trench gates and vertical fins.
• Optimize device reliability for extreme high-voltage applications up to several kilovolts.
The Core Challenge
Traditional lateral HEMTs struggle with field crowding and thermal management as voltages scale, creating a bottleneck for the next generation of power grids and electric vehicles.
01
The Physics of Gallium Nitride
02
Limits of Lateral HEMTs
03
Vertical vs. Lateral Geometries
04
The Art of Bulk GaN Growth
05
Homoepitaxial Growth Techniques
06
The Drift Region Physics
07
Vertical MOSFET Architectures
08
Trench Gate Engineering
09
Current Aperture Vertical Electronics
10
Vertical FinFET Fabrication
11
Doping Challenges in Vertical GaN
12
Schottky Barrier Diode (SBD) Design
13
PN Junction Diode Dynamics
14
Edge Termination Techniques
15
Thermal Management in Vertical Devices
16
Advanced Metrology for GaN
17
Device Reliability and Aging
18
Packaging for Vertical GaN
19
The Role of HVDC Grids
20
Electric Vehicle Power Trains
21
Future Trends in GaN
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